1994. 5. 11 1/1 semiconductor technical data KTA1274 epitaxial planar pnp transistor revision no : 0 general purpose application. features complementary to ktc3227. maximum rating (ta=25 1 ) dim millimeters a b d e g h k l 1. emitter 2. collector 3. base p to-92l 7.20 max 5.20 max 2.50 max 0.60 max 1.27 1.70 max 0.55 max 14.00 0.50 0.35 min 0.75 0.10 4 f j m o q 25 1.25 1.50 0.10 max depth:0.2 123 b a c q k ff m m n n o h l j d c n g p hh e d h r s 12.50 0.50 r 1.00 s 1.15 max + _ + _ + _ characteristic symbol rating unit collector-base voltage v cbo -80 v collector-emitter voltage v ceo -80 v emitter-base voltage v ebo -5 v collector current i c -400 ma emitter current i e 400 ma collector power dissipation p c 1 w junction temperature t j 150 1 storage temperature range t stg -55 150 1 electrical characteristics (ta=25 1 ) note : h fe classification o:70~140, y:120~240. characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-50v, i e =0 - - -100 na emitter-cut-off current i ebo v eb =-5v, i c =0 - - -100 na collector-emitter breakdown voltage v (br)ceo i c =-5ma, i b =0 -80 - - v dc current gain h fe (1) (note) v ce =-2v, i c =-50ma 70 - 240 h fe (2) v ce =-2v, i c =-200ma 40 - - collector-emitter saturation voltage v ce(sat) i c =-200ma, i b =-20ma - - -0.4 v base-emitter voltage v be v ce =-2v, i c =-5ma -0.55 - -0.8 v transition frequency f t v ce =-10v, i c =-10ma - 100 - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - 14 - pf
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